si5513dc

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Si5513DC Datasheet:

(Absolute) Maximum Ratings:

Parameter		Symbol	Channel-1		Channel-2		Unit
			5 secs	Steady State	5 secs	Steady State
Drain-Source Voltage		V_DS	20		-20		V
Gate-Source Voltage		V_GS	±12		±12
Continuous Drain Current (T_J = 150℃)^a	T_A = 25℃	I_D	4.2	3.1	-2.9	-2.1	A
	T_A = 85℃		3.0	2.2	-2.1	-1.5
Continuous Source Current (Diode Conduction)^a		I_S	1.8	0.9	-1.8	-0.9
Pulsed Drain Current		I_DM	10		-10
Maximum Power Dissipation^a	T_A = 25℃	P_D	2.1	1.1	2.1	1.1	W
	T_A = 85℃		1.1	0.6	1.1	0.6
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150				℃
Soldering Recommendations (Peak Temperature)^{b, c}			260

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Pinout:

PDF for si5513dc:

si5513dc PDF Download

File Size:88353 KB
Manufacturer:VISAY [Vishay Siliconix]

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si5513dc

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Si5513DC Datasheet: